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FJPF9020 PNP Epitaxial Darlington Transistor. Monolithic Construction With Built In Base-Emitter Shunt Resistors. High Collector-Base Breakdown Voltage : BVCBO = -550V. High DC Current Gain : hFE = 550 @ VCE = -4V, IC = -1A (Typ.) Industrial Use. PNP Epitaxial Darlington Transistor. Absolute Maximum Ratings TC=25°C unless otherwise noted. TO-220F.
Obsolete. This product is no longer manufactured. Additional Resources. Order today, ships today. FJPF9020TU – Bipolar (BJT) Transistor PNP - Darlington 550 V 2 A 15 W Through Hole TO-220F-3 from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
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- Obsolete
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View datasheets for FJPF9020 by ON Semiconductor and other related components here.
FJPF9020TU onsemi / Fairchild Darlington Transistors PNP Transistor Epitaxial Darlington datasheet, inventory, & pricing.
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- Darlington Transistors
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Part #: FJPF9020. Download. File Size: 63Kbytes. Page: 5 Pages. Description: PNP Epitaxial Darlington Transistor. Manufacturer: Fairchild Semiconductor.
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Transistor Catalog. FJPF9020 Datasheet, Equivalent, Cross Reference Search. Type Designator: FJPF9020. Material of Transistor: Si. Polarity: PNP. Maximum Collector Power Dissipation (Pc): 15 W. Maximum Collector-Base Voltage |Vcb|: 550 V. Maximum Collector-Emitter Voltage |Vce|: 550 V. Maximum Emitter-Base Voltage |Veb|: 6 V.
Details, datasheet, quote on part number: FJPF9020. Features, Applications. Monolithic Construction With Built In Base-Emitter Shunt Resistors. High Collector-Base Breakdown Voltage : BVCBO = -550V High DC Current Gain : hFE 550 @ VCE = -1A (Typ.) Industrial Use. Absolute Maximum Ratings TC=25°C unless otherwise noted.