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View FJNS4205R by onsemi datasheet for technical specifications, dimensions and more at DigiKey.
. ©2002 Fairchild Semiconductor CorporationRev. A, July 2002. FJNS4205R. PNP Epitaxial Silicon Transistor . Absolute Maximum Ratings Ta=25°C unless otherwise noted. Electrical CharacteristicsTa=25°Cunless otherwise noted. SymbolParameterValue Units. VCBO Collector-Base Voltage-50V. VCEO Collector-Emitter Voltage-50V.
FJNS4205R. Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=10KΩ) • Complement to FJNS3205R. Equivalent Circuit B E C R1 R2. 1.Emitter 2. Collector 3. Base. 1 TO-92S. ©2002 Fairchild Semiconductor Corporation. FJNS4205R. Rev. A, July 2002.
Description. PNP Epitaxial Silicon Transistor. FJNS4205R Datasheet (HTML) - Fairchild Semiconductor. FJNS4205R Product details. Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit. • Built in bias Resistor (R1=4.7KΩ, R2=10KΩ) • Complement to FJNS3205R. Similar Part No. - FJNS420 5R.
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FJNS4205R: Category: Description: FJNS4205R - PNP Epitaxial Silicon Transistor: Company: Fairchild Semiconductor Datasheet: Download FJNS4205R Datasheet: Ask AI
FJNS4205R Datasheet, Equivalent, Cross Reference Search. Type Designator: FJNS4205R Material of Transistor: Si Polarity: Pre-Biased-PNP Built in Bias Resistor R1 = 4.7 kOhm. Built in Bias Resistor R2 = 10 kOhm. Typical Resistor Ratio R1/R2 = 0.47. Maximum Collector Power Dissipation (Pc): 0.3 W. Maximum Collector-Base Voltage |Vcb|: 50 V
onsemi FJNS4205R Series Bipolar Transistors - Pre-Biased are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for onsemi FJNS4205R Series Bipolar Transistors - Pre-Biased.