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Symbol. Parameter. Test Condition. Min. Typ. Max. Units. BVCBO. Collector-Base Breakdown Voltage. IC=100µA, IE=0. 40. V. BVCEO.
FJN3310R Datasheet, Equivalent, Cross Reference Search. Type Designator: FJN3310R. Material of Transistor: Si. Polarity: Pre-Biased-NPN.
FJN3310R Details... FJN3310 is a Digital Transistor. General Data; Properties; Package. FJN3310R - General Data. Part Number, FJN3310R. Description, FJN3310 is ...
FJN3310R Datasheet. FJN3310R FJN3310R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built ...
Symbol elementu: FJN3310R. Opis: NPN Epitaxial Silicon Transistor. Pobierz: FJN3310R.pdf. Rozmiar pliku: 33 KB / 4 stron. Producent: Fairchild.
FJN3310R · FAIRCHILD-FJN3310R Datasheet 32Kb/4P, NPN Epitaxial Silicon Transistor. FJN3311R · FAIRCHILD-FJN3311R Datasheet 26Kb/3P, NPN Epitaxial Silicon ...
FJN3310R FJN3310R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor ...
FJN13003 NPN Silicon Transistor . High Speed Switching Suitable for Electronic Ballast to 21W. Absolute Maximum Ratings TC=25°C unless otherwise noted.
fjn3310r.pdf · FJN3312R. FJN3310RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built ...