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FII30-12D Product details. Features. • NPT IGBT. - low saturation voltage. - no latch up. - positive temperature coefficient for easy paralleling. • HiPerFREDTM diode. - fast reverse recovery. - low operating forward voltage. - low leakage current. • ISOPLUS i4-PACTM package. - isolated back surface. - enlarged creepage towards heatsink.
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FII30-12E – IGBT Array NPT Half Bridge 1200 V 33 A 150 W Through Hole ISOPLUS i4-PAC™ from IXYS. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
- IGBT H BRIDGE 1200V 33A I4PAK5
- IXYS
- FII30-12E-ND
- FII30-12E
Specifications. Select at least one checkbox above to show similar products in this category. Show Similar. Attributes selected: 0. Product Comments. Product Compliance. FII30-12E IXYS IGBT Transistors 30 Amps 1200V datasheet, inventory, & pricing.
- IXYS
- IGBT Transistors
Download FII30-12D Datasheet: www.DataSheet4U.com Advanced Technical Information Fast IGBT Chopper in ISOPLUS i4-PACTM FII 30-12D IC25 VCES VCE(sat) typ. = 30 A ...
FII30-12D: Category: Discrete => IGBTs (Insulated Gate Bipolar Transistors) => IGBT Modules: Title: Phase-leg Configuration: Description: Company: IXYS Corporation Datasheet: Download FII30-12D Datasheet: Quote
Features. • NPT3IGBT. -positive temperature coefficient of. saturation voltage for easy paralleling. -fast switching. -short tail current for optimized. performance in resonant circuits. • HiPerFREDTMdiode. -fast reverse recovery. -low operating forward voltage. -low leakage current. •ISOPLUS i4-PACTMpackage. -isolated back surface.
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