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Part #: FHX14LG. Download. File Size: 89Kbytes. Page: 6 Pages. Description: Super Low Noise HEMT. Manufacturer: Eudyna Devices Inc.
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FHX14LG. The FHX14LG from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 12 GHz, Gain 11 to 13 dB, Noise Figure 0.55 to 0.6 dB, Supply Voltage 2 V, Drain Current 10 to 60 mA. Tags: Surface Mount. More details for FHX14LG can be seen below.
Order FHX14LG Sumitomo Electric Device Innovations U.S.A. at CDI RF. View pricing, stock, datasheets, order online, request a quote or submit a technical inquiry. SUPPORT
The FHX13LG, FHX14LG is a Super High Electron Mobility Transistor(SuperHEMTTM) intended for general purpose, ultra-low noise and high gain amplifiers in the 2-18GHz frequency range. The devices are packaged in cost effective, low parasitic, hermetically sealed metal-ceramic package for high volume telecommunication, TVRO, VSAT or other low ...
FHX14LG: Class: Low-noise HEMTs > GaAs HEMTs: Outline / Package Code: LG: Function: Super Low Noise HEMT: Features: Low Noise Figure: 0.45dB (Typ.)@f=12GHz (FHX13) High Associated Gain: 13.0dB (Typ.)@f=12GHz; Lg ≤ 0.15µm, Wg = 200µm; Gold Gate Metallization for High Reliability; Cost Effective Ceramic Microstrip (SMT) Package; Tape and Reel ...
Sumitomo Electric Industries, Ltd's FHX14LG is a trans rf mosfet 2v 4-pin case lg. in the fet transistors, rf fets category. Check part details, parametric & specs and download pdf datasheet from datasheets.com, a global distributor of electronics components.
The FHX13LG,FHX14LG is a Super High Electron Mobility Transistor(SuperHEMT TM) Intended for general purpose, ultra-low noise and high gain amplifiers In the 2 to18GHz frequency range. The devices are packaged in cost effective, low parasitic, hermetically sealed metal-ceramic package for high volume telecommunication,TVRO,VSAT or other