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Order FHX05LG Sumitomo Electric Device Innovations U.S.A. at CDI RF. View pricing, stock, datasheets, order online, request a quote or submit a technical inquiry.
The FHX04LG, FHX05LG, FHX06LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency range.The devices are packaged in cost effective, low parasitic, hermetically sealed metal-ceramic package for high volume telecommunication, TVRO, VSAT or other low noise applications.
FHX05LG - RF Transistor from Sumitomo Electric Device Innovations. Get product specifications, Download the Datasheet, Request a Quote and get pricing for FHX05LG on everything RF
The FHX04LG, FHX05LG, FHX06LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency range.The devices are packaged in cost effective, low parasitic, hermetically sealed metal-ceramic package for high volume telecommunication, TVRO, VSAT or other low noise applications.
Part #: FHX05LG. Download. File Size: 116Kbytes. Page: 5 Pages. Description: Super Low Noise HEMT. Manufacturer: Fujitsu Component Limited..
FHX05LG SUMITOMO ELECTRIC Device Innovations Inc RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, CASE LG, SMT, 4 PIN
The FHX04LG, FHX05LG, FHX06LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise and high gain amplifiers in the 2 to 18GHz frequency range. The devices are packaged in cost effective, low parasitic, hermetically sealed metal-ceramic package for high volume telecommunication, TVRO, VSAT or other low noise