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  1. www.sedi.co.jp › pdf › FHX04X_FHX05X_FHX06XFHX04X, FHX05X, FHX06X

    The FHX04X, FHX05X, FHX06X are High Electron Mobility Transistors (HEMT) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency range.The devices are well suited for telecommunication, DBS, TVRO, VSAT or other low noise applications. Eudyna’s stringent Quality Assurance Program assures the highest ...

  2. FHX04X FHX05X FHX06X Maximum Abailable Gain Thermal Resistance Unit V V mW deg.C Rating 3.5-3.0 180-65 to +175 Drain-Source Voltage Gate-Source Voltage Channel to Case V GS P t* V DS = 2V, V GS = 0V V DS = 2V, I DS = 10mA *Note: Mounted on Al 2 O 3 board (30 x 30 x 0.65mm) Total Power Dissipation Storage Temperature Channel Temperature 175 ...

  3. The FHX04X, FHX05X, FHX06X are High Electron Mobility Transistors (HEMT) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency range. The devices are well suited for telecommunication, DBS, TVRO, VSAT or other low noise applications.

  4. About Eudyna Devices Inc. Eudyna Devices Inc. is a semiconductor company that specializes in the design, development, and production of high-frequency, high-power, and high-reliability semiconductor devices. The company was founded in 1999 in Japan and has since expanded globally, with subsidiaries in the United States, Europe, and Asia.

  5. FHX04X - RF Transistor from Sumitomo Electric Device Innovations. Get product specifications, Download the Datasheet, Request a Quote and get pricing for FHX04X on everything RF

  6. Order FHX04X Sumitomo Electric Device Innovations U.S.A. at CDI RF. View pricing, stock, datasheets, order online, request a quote or submit a technical inquiry.

  7. FHX04X Low Noise Figure: (Typ.)@f=12GHz (FHX04) High Associated Gain: = 200µm Gold Gate Metallization for High Reliability. DESCRIPTION. The FHX05X, FHX06X are High Electron Mobility Transistors (HEMT) intended for general purpose, low noise and high