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The FHX04LG, FHX05LG, FHX06LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise and high gain amplifiers in the 2 to 18GHz frequency range. The devices are packaged in cost effective, low parasitic, hermetically sealed metal-ceramic package for high volume telecommunication, TVRO, VSAT or other low noise
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The FHX04LG, FHX05LG, FHX06LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency range.The devices are packaged in cost effective, low parasitic, hermetically sealed metal-ceramic package for high volume telecommunication, TVRO, VSAT or other low noise applications.
The FHX04LG from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 12 GHz, Power 14 dBm, Power (W) 0 to 0.03 W, Gain 9.5 to 10.5 dB, Noise Figure 0.75 to 0.85 dB. Tags: Surface Mount. More details for FHX04LG can be seen below. Sumitomo Electric Device Innovations. 12 GHz, 9.5 to 10.5 dB Gain GaAs HEMT.
Part #: FHX04LG. Download. File Size: 116Kbytes. Page: 5 Pages. Description: Super Low Noise HEMT. Manufacturer: Fujitsu Component Limited..
FHX04LG: Class: Low-noise HEMTs > GaAs HEMTs: Outline / Package Code: LG: Function: Super Low Noise HEMT: Features: Low Noise Figure: 0.75dB (Typ.)@f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz; Lg ≤ 0.25µm, Wg = 200µm; Gold Gate Metallization for High Reliability; Cost Effective Ceramic Microstrip (SMT) Package; Tape and Reel ...
Sumitomo Electric Industries, Ltd's FHX04LG is a trans rf mosfet 2v 4-pin case lg. in the fet transistors, rf fets category. Check part details, parametric & specs and download pdf datasheet from datasheets.com, a global distributor of electronics components.
FHX04LG: Category: RF & Microwaves => Transistors: Title: HEMT: Description: C, X/Ku, K-band Low Noise Hemts: Company: Fujitsu Microelectronics, Inc. Datasheet: Download FHX04LG Datasheet: Cross ref. Similar parts: NE425S01: Quote