FHR20X Low Noise Figure: 0.75dB (Typ.)@f=18GHz High Associated Gain: = 100µm Gold Gate Metallization for High Reliability. DESCRIPTION.
It is non-ionizing, highly sensitive to water molecules, and suitable for the observation of many biomolecular characteristics based on low-energy vibrational ...
FHR10X, FHR20X, FHS1117 datasheet.Selling leads from all over the world, Seekic is the world's biggest IC trading marketplace on the internet.
The oscillator uses a commercially available HEMT (Fujitsu FHR20X) for the active device, and results in an output power of 0.6 dBm with a 5.7% DC-RF efficiency ...
This plasma-wave electronics short-channel HEMT detector produces an open-circuit dc voltage, which is propor- tional to the intensity of the incoming terahertz ...
The FHR20X is a Super High Electron Mobility Transistor. (SuperHEMT. TM. ) intended for general purpose, ultra-low noise and high gain amplifiers in the 2 ...
FHR20X. Abstract: GaAs FET HEMT Chips 0840 057 TM 1628. Text: FHR20X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=18GHz High ...
Some Part number from the same manufacture FCI Semiconductor. FHR02X Super Low Noise Hemt. FHR20X GAAS Fet & Hemt Chips. FHX04 Super Low Noise Hemt.
Download Fujitsu Microelectronics, Inc. FHR20X pdf datasheet file.