The FHC40LG is a Super High Electron Mobility Transistor. (SuperHEMTTM) intended for general purpose, ultra-low noise and high gain amplifiers in the 2 to ...
FHC40LG. Super Low Noise HEMT. Item. Drain-Source Voltage. Gate-Source Voltage. Total Power Dissipation. Storage Temperature. Channel ... FHC40LG. Super Low Noise ...
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Order FHC40LG Sumitomo Electric Device Innovations U.S.A. at CDI RF. View pricing, stock, datasheets, order online, request a quote or submit a technical ...
$69.00
High gain amplifiers in the 2-12GHz frequency range. This device is. • High Associated Gain: 15.5dB (Typ.). TVRO, VSAT or other low noise applications.
Part #: FHC40LG ; Description: RF Small Signal Field-Effect Transistor ; Mfr Package Description, HERMETIC SEALED, METAL CERAMIC PACKAGE-4 ; Status, Transferred.
The FHC40LG from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 4 GHz, Gain 14 to 15.5 dB, Noise Figure 0.3 to 0.4 dB, ...
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 2 volts.
The FRFS-FHC40LG-001 is a high performance custom designed. RF/Microwave production type fixture for testing Sumitomo. FHC40LG or Transcom TC2384 low noise ...
