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  1. www.qorvo.com › products › pFH101-G - Qorvo

    Qorvo's FH101-G is a high dynamic range FET packaged in a low-cost surface-mount package. The combination of low noise figure and high output IP3 at the same bias point makes it ideal for receiver and transmitter applications. The device combines dependable performance with superb quality to maintain MTTF values exceeding 100 years at mounting ...

  2. FH101-G Model Number: FH101-G Transistors from Qorvo Transistor, 0.05 - 4 GHz, 18 dBm, 19dB, 5V, SOT-89, GaAs Mesfet

  3. High Dynamic Range FET, FH101-G Datasheet, FH101-G circuit, FH101-G data sheet : WJCI, alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors.

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  4. FH101-G Qorvo RF MOSFET Transistors 50-4000MHz +18dBm P1dB datasheet, inventory & pricing.

  5. The FH101-G is a high dynamic range FET- packaged in a low-cost surface-mount package. The combination of low noise figure and high output IP3 at the same bias point makes it ideal for receiver and transmitter applications. The device combines dependable performance with superb quality to maintain MTTF

  6. Dec 10, 2019 · FH101-G High Dynamic Range FET Recommended Operating Conditions Parameter Min Typ Max Units TCASE Tj for >106 hours MTTF -40 +85 +160 °C °C Electrical specifications are measured at specified test conditions.

  7. FH101 High Dynamic Range FET (leaded)1 FH101-G High Dynamic Range FET (lead-free)2 1 Product may contain lead-bearing materials. Maximum +235°C reflow temperature. 2 Product does not contain lead-bearing materials. Maximum +260°C reflow temperature. Also compatible with leaded soldering process. The Communications Edge™ Absolute Maximum Ratings