Order today, ships today. FGP30N6S2D – IGBT 600 V 45 A 167 W Through Hole TO-220-3 from onsemi. Pricing and Availability on millions of electronic ...
The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are. Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs.
Details, datasheet, quote on part number: FGP30N6S2D ; Description, 600V, SMPS ii Series N-channel Igbt With Anti-parallel Stealth Diode ; Company, Fairchild ...
Specifications: Transistor Type: IGBT; Max Voltage Vce Sat: 2.5 V; Collector-to-Emitter Breakdown Voltage: 600 V; Transistor Case Style: TO-220AB; Number of ...
These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power ...
Formerly Developmental Type TA49367. Package TO-247. TO-220AB TO-263AB Symbol C COLLECTOR Back-Metal COLLECTOR Flange Device ...