Search Results

  1. www.alldatasheet.com › FAIRCHILD › FGB20N6S2DTFGB20N6S2DT Datasheet(PDF) - Fairchild Semiconductor

    600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diode, FGB20N6S2DT Datasheet, FGB20N6S2DT circuit, FGB20N6S2DT data sheet : FAIRCHILD, alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors.

  2. media.digikey.com › pdf › Data SheetsFGH20N6S2D / FGP20N6S2D / FGB20N6S2D - Digi-Key

    20N6S2D FGB20N6S2DT TO-263AB 24mm 800 units Symbol Parameter Test Conditions Min Typ Max Units BVCES Collector to Emitter Breakdown Voltage IC = 250µA, VGE = 0 600 - - V ICES Collector to Emitter Leakage Current VCE = 600V TJ = 25°C - - 250 µA TJ = 125°C- - 2.0 mA IGES Gate to Emitter Leakage Current V GE = ± 20V - - ±250 nA

  3. www.digikey.com › en › htmldatasheetsFG(H/P/B)20N6S2D Datasheet by onsemi - Digi-Key Electronics

    20N6S2D FGB20N6S2DT T O-263AB 24mm 800 units. Symbol Par ameter T est Condition s Min T yp Max Units. BV CES Collector to Emitter Breakdown Voltage IC = 250µA, VGE = 0 600 - - V. I CES Collector to Emitter Leakage Current VCE = 600V TJ = 25°C - - 250 µA. T J = 125°C- - 2.0 mA.

  4. www.datasheets.com › en › part-detailsonsemi | FGB20N6S2DT - Datasheet PDF & Tech Specs

    onsemi's FGB20N6S2DT is trans igbt chip n-ch 600v 28a 125mw 3-pin(2+tab) d2pak t/r in the igbt transistors, igbt chip category. Check part details, parametric & specs and download pdf datasheet from datasheets.com, a global distributor of electronics components.

  5. Videos

    4:46
    youtube.com

    Unboxing Gateway Creator Series GWTN156-2BK 15.6'' Notebook | Walmart Spark Review

    Sep 15, 2020

    18.2K Views

    1:05
    youtube.com

    Dependability Matters - STANLEY® FATMAX® V20 Cordless Tool System

    Jul 21, 2022

    1.5K Views

    View all

  6. www.alldatasheet.com › datasheet-pdf › pdfFGB20N6S2 Datasheet(PDF) - Fairchild Semiconductor

    FGB20N6S2DT: 231Kb / 9P: 600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diode More results. Similar Description - FGB20N6S2: Manufacturer: Part ...

    • FGB20N6S2 Download
    • 8 Pages
    • 183.25 Kbytes
    • FGB20N6S2

  7. www.digchip.com › datasheets › partsFGB20N6S2D datasheet - 600V, SMPS ii Series N-channel Igbt ...

    Device Marking 20N6S2D Device FGB20N6S2D FGB20N6S2DT Package TO-220AB TO-263AB Tape Width N/A 24mm Quantity units. Symbol Parameter Test Conditions = 250µA, VGE = 0 VCE = 600V VGE = 125°C IGES Gate to Emitter Leakage Current Min Typ Max Units. BVCES ICES Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current mA nA

  8. www.digikey.com › htmldatasheets › productionFG(H/P/B)20N6S2D Datasheet by ON Semiconductor | Digi-Key ...

    ©2002 Fairchild Semiconductor Corporation. Jul y 2002. FGH20N6S2D / FGP 20N6S2D / FG B20N6S2D Rev. A1