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FDV302P/D Digital FET, P-Channel-25 V, -0.12 A, 10 FDV302P General Description This P−Channel logic level enhancement mode field effect transistor is produced using our proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This device has been designed
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3 days ago · 5 ns. Width: 1.3 mm. Part # Aliases: FDV302P_NL. Unit Weight: 0.000282 oz. Select at least one checkbox above to show similar products in this category. Show Similar.
- onsemi
- Si
- MOSFET
Unit Price: $0.73000. View and Compare All Substitutes. Image shown is a representation only. Exact specifications should be obtained from the product data sheet. FDV302P. DigiKey Part Number. FDV302PTR-ND - Tape & Reel (TR) FDV302PCT-ND - Cut Tape (CT) FDV302PDKR-ND - Digi-Reel®.
- $0.36
- onsemi
- MOSFET P-CH 25V 120MA SOT23
- FDV302P
Overview. This P-Channel logic level enhancement mode field effect transistor is produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors.
FDV302P Product details. General Description. This P-Channel logic level enhancement mode field effect transistor is produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage ...
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FDV302P Digital FET, P-Channel General Description Features Absolute Maximum Ratings T A = 25 oC unless otherwise noted Symbol Parameter FDV302P Units V DSS Drain-Source Voltage -25 V V GSS Gate-Source Voltage -8 V I D Drain Current - Continuous -0.12 A - Pulsed -0.5 P
FDV302P. Digital FET, P-Channel. General Description. This P-Channel logic level enhancement mode field effect transistor is produced using our proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage ...