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  1. FDV302P/D Digital FET, P-Channel-25 V, -0.12 A, 10 FDV302P General Description This P−Channel logic level enhancement mode field effect transistor is produced using our proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This device has been designed

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  2. 3 days ago · 5 ns. Width: 1.3 mm. Part # Aliases: FDV302P_NL. Unit Weight: 0.000282 oz. Select at least one checkbox above to show similar products in this category. Show Similar.

    • onsemi
    • Si
    • MOSFET
  3. Unit Price: $0.73000. View and Compare All Substitutes. Image shown is a representation only. Exact specifications should be obtained from the product data sheet. FDV302P. DigiKey Part Number. FDV302PTR-ND - Tape & Reel (TR) FDV302PCT-ND - Cut Tape (CT) FDV302PDKR-ND - Digi-Reel®.

    • $0.36
    • onsemi
    • MOSFET P-CH 25V 120MA SOT23
    • FDV302P
  4. www.onsemi.com › mosfets › fdv302pFDV302P - onsemi

    Overview. This P-Channel logic level enhancement mode field effect transistor is produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors.

  5. FDV302P Product details. General Description. This P-Channel logic level enhancement mode field effect transistor is produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage ...

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    • FDV302P
  6. FDV302P Digital FET, P-Channel General Description Features Absolute Maximum Ratings T A = 25 oC unless otherwise noted Symbol Parameter FDV302P Units V DSS Drain-Source Voltage -25 V V GSS Gate-Source Voltage -8 V I D Drain Current - Continuous -0.12 A - Pulsed -0.5 P

  7. FDV302P. Digital FET, P-Channel. General Description. This P-Channel logic level enhancement mode field effect transistor is produced using our proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage ...