[PDF] FDV302P - Digital FET, P-Channel -25 V, -0.12 A, 10 Ω - Onsemi
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This P−Channel logic level enhancement mode field effect transistor is produced using our proprietary, high cell density, DMOS technology.
This P-Channel logic level enhancement mode field effect transistor is produced using a proprietary, high cell density, DMOS technology.
Delivers -30V drain-to-source voltage, 2.7mΩ on-resistance at 10V, and 164A drain/standby current. Learn More.
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This P-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology.