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FDT439N. This N−Channel enhancement mode power field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance and provide superior switching performance.
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4,000. Order today, ships today. FDT439N – N-Channel 30 V 6.3A (Ta) 3W (Ta) Surface Mount SOT-223-4 from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
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This N-Channel Enhancement mode field effect transistor is produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, and provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook ...
Features. 6.3 A, 30 V. RDS (on) = 0.045 Ω @ VGS = 4.5 V. R DS (on) = 0.058 Ω @ VGS = 2.5 V. Fast switching speed. High power and current handling capabitlity in a. widely used surface mount package. Absolute Maximum Ratings TA = 25°C unless otherwise noted. Symbol Parameter FDT439N Units. V DSS Drain-Source Voltage 30 V.
Symbol Parameter FDT439N Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±8V ID Drain Current - Continuous (Note 1a) 6.3 A - Pulsed 20 PD Power Dissipation for Single Operation (Note 1a) 3W (Note 1b) 1.3 (Note 1c) 1.1 TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics
Description: MOSFET SOT-223 N-CH 30V. Datasheet: FDT439N Datasheet (PDF) ECAD Model: Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model. More Information. Learn more about onsemi / Fairchild FDT439N. Compare Product. Add To Project | Add Notes. Availability. Stock: 0.
FDT439N onsemi / Fairchild MOSFET SOT-223 N-CH 30V datasheet, inventory & pricing.