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FDS6982. Dual N-Channel, Notebook Power Supply MOSFET. General Description. This part is designed to replace two single SO-8 MOSFETs in synchronous DC:DC power supplies that provide the various peripheral voltage rails required in notebook computers and other battery powered electronic devices.
The FDS6982AS is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices.
Order today, ships today. FDS6982 – Mosfet Array 30V 6.3A, 8.6A 900mW Surface Mount 8-SOIC from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
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Features. Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body diode. 8.6A, 30V R max= 13.5mΩ @ V = 10V. DS(on) GS. RDS(on) max= 16.5mΩ @ VGS = 4.5V. Low gate charge (21nC typical) Q1: Optimized for low switching losses. 6.3A, 30V R max= 28.0mΩ @ V. DS(on) GS = 10V. RDS(on) max= 35.0mΩ @ VGS = 4.5V.
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FDS6982 contains two unique 30V, N-channel, logic level, PowerTrench™ MOSFETs designed to maximize power conversion efficiency. Features. • Q2: 8.6A, 30V. RDS (on) = 0.015 Ω @ VGS = 10V. RDS (on) = 0.020 Ω @ VGS = 4.5V. • Q1: 6.3A, 30V. RDS (on) = 0.028 Ω @ VGS = 10V. RDS (on) = 0.035 Ω @ VGS = 4.5V. • Fast switching speed.
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FDS6982 Datasheet by ON Semiconductor | Digi-Key Electronics. View All Related Products Download PDF Datasheet. FDS6982, Re. Dual N-Channel, Notebook Power Supply MOSFET. Q2: 8.6A, 30VDS (on) DS (on) Q1: 6.3A, 30V. High performance trench technology for extremely. 1999 Fairchild Semiconductor Corporation. Drain-Source Voltage.
View FDS6982 by onsemi datasheet for technical specifications, dimensions and more at DigiKey.