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  1. www.onsemi.com › pdf › datasheetMOSFET – P-Channel, POWERTRENCH - onsemi

    FDS6673BZ is a P-Channel MOSFET with low RDS(on) and high ESD protection for power management and load switching applications. It has a SOIC8 package, a -30 V drain to source voltage, and a -25 V gate to source voltage range.

  2. www.digikey.com › detail › onsemiFDS6673BZ onsemi | Discrete Semiconductor Products | DigiKey

    2,500. Order today, ships today. FDS6673BZ – P-Channel 30 V 14.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

    • Onsemi
    • Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
    • onsemi
    • PowerTrench®

  3. www.mouser.com › ProductDetail › onsemi-FairchildFDS6673BZ onsemi / Fairchild | Mouser

    5 days ago · Description: MOSFET -30V P-Channel PowerTrench MOSFET. Datasheet: FDS6673BZ Datasheet (PDF) ECAD Model: Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model. More Information. Learn more about onsemi / Fairchild FDS6673BZ. Compare Product. Add To Project | Add Notes. In Stock: 3,356. Stock: 3,356.

    • Onsemi / Fairchild
    • MOSFET
    • onsemi

  4. www.onsemi.com › mosfets › fds6673bzFDS6673BZ - onsemi

    Overview. This P-Channel MOSFET is produced using an advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Waiting. Product Overview. Applications. Features.

  5. www.onsemi.com › pdf › datasheetIs Now - ON Semiconductor

    FDS6673BZ-F085 is a low on-state resistance P-Channel MOSFET with high ESD protection and current handling capability. It is designed for power management and battery applications in notebook computers and portable devices.

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  6. www.mouser.com › datasheet › 2FDS6673BZ P-Channel PowerTrench® MOSFET - Mouser Electronics

    This device is well suited for Power Management and load switching applications common in Computers and Portable Battery Packs. Notebook. Features. Max rDS(on) = 7.8m: VGS= -10V, ID = -14.5A. Max rDS(on) = 12m: VGS = -4.5V, ID = -12A. Extended VGS range (-25V) for battery applications. HBM ESD protection level of V typical (note 3) 6.5k.

  7. datasheet.lcsc.com › lcsc › 1912141442_onsemiFDS6673BZ P-Channel PowerTrench® MOSFET

    Features. Max rDS(on) = 7.8m: VGS= -10V, ID = -14.5A. Max rDS(on) = 12m: VGS = -4.5V, ID = -12A. Extended VGS range (-25V) for battery applications. HBM ESD protection level of V typical (note 3) 6.5k. High performance trench technology for extremely low rDS(on) High power and current handling capability. RoHS compliant. SO-8 S. 5. 4. 6. 3. 7. 2.

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