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Features. –5 A, –30 V RDS(ON) = 55 mW @ VGS = –10 V RDS(ON) = 95 mW @ VGS = –4.5 V. Low gate charge (6nC typical) Fast switching speed. High performance trench technology for extremely low RDS(ON) . High power and current handling capability. D D1 D. D2. SO-8 G1 S1 G G2. Pin 1 SO-8 S S S2 S. Absolute Maximum Ratings.
FDS4953DKR. Standard Package. 2,500. Order today, ships today. FDS4953 – Mosfet Array 30V 5A 900mW Surface Mount 8-SOIC from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
FDS4953 Product details. This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).
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FDS4953. Dual 30V P-Channel PowerTrench MOSFET. General Description. This P -Channel MOSFET is a rugged gate version of. Fairchild Semiconductor’s advanced PowerTrench. process. It has been optimized for power management. applications requir ing a wide range of gave drive. voltage ratings (4.5V – 25V). Applications. • Power management.
FDS4953. Mfr.: onsemi / Fairchild. Customer No: Description: MOSFET SO-8 P-CH DUAL -30V. Lifecycle: Obsolete. Datasheet: FDS4953 Datasheet (PDF) ECAD Model: Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model. Compare Product. Add To Project | Add Notes. Availability. Stock: Not Available.
FDS4953. Dual 30V P-Channel PowerTrench MOSFET. General Description. This P-Channel MOSFET is a rugged gate version of . Fairchild Semiconductor’s advanced PowerTrench. process. It has been optimized for power management . applications requiring a wide range of gave drive . voltage ratings (4.5V –25V). Applications. •Power management.
www.onsemi.com 4 Typical Characteristics 0 2 4 6 8 10 0 6 12 18 24 30 36 Q g, GATE CHARGE (nC)-V GS, GATE-SOURCE VOLTAGE (V) I D = -8.8A V DS = -10V-20V-15V 0 400 800 1200 1600 2000 0 5 10 15 20 25 30