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FDS4935A/D MOSFET – Dual, P-Channel, POWERTRENCH 30 V FDS4935A General Description This P−Channel MOSFET is a rugged gate version of ON Semiconductor’s advanced POWERTRENCH® process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5 V – 20 V). Features
- 244KB
- 7
3 days ago · 2 Channel. Vds - Drain-Source Breakdown Voltage: 30 V. Id - Continuous Drain Current: 7 A. Rds On - Drain-Source Resistance: 23 mOhms. Vgs - Gate-Source Voltage: - 20 V, + 20 V.
- Onsemi / Fairchild
- MOSFET
- onsemi
- Si
Standard Package. 2,500. Order today, ships today. FDS4935A – Mosfet Array 30V 7A 900mW Surface Mount 8-SOIC from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
- Onsemi
- Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
- onsemi
- PowerTrench®
Overview. This P-Channel MOSFET is a rugged gate version of an advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 20V). Waiting. Product Overview.
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 20V).
FDS4935A. +2 images. Images are for reference only. See Product Specifications. Share. Mouser No: 512-FDS4935A. Mfr. No: FDS4935A. Mfr.: onsemi / Fairchild. Customer No: Description: MOSFET -30V Dual. Datasheet: FDS4935A Datasheet (PDF) ECAD Model: Download the free Library Loader to convert this file for your ECAD Tool.
Features. • –7 A, –30 V. RDS(ON) = 23 mΩ @ VGS = –10 V RDS(ON) = 35 mΩ @ VGS = –4.5 V. Low gate charge (15nC typical) Fast switching speed. High performance trench technology for extremely low RDS(ON) . High power and current handling capability. SO-8. DD1. Pin 1 SO-8 S2 S. Absolute Maximum Ratings. TA=25oC unless otherwise noted.
