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Overview. These dual N- and P-Channel enhancement mode power field effect transistors are produced using an advanced PowerTrench ® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. 6.2A, 40V Max.
Other Names. FDS4897CDKR. FDS4897CCT. FDS4897CTR. Standard Package. 2,500. Order today, ships today. FDS4897C – Mosfet Array 40V 6.2A, 4.4A 900mW Surface Mount 8-SOIC from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
- Onsemi
- Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
- onsemi
- PowerTrench®
FDS4897C onsemi / Fairchild MOSFET 40V Dual N & P-Ch PowerTrench MOSFET datasheet, inventory & pricing. Skip to Main Content +49 (0)89 520 462 110 .
- onsemi
- Si
- MOSFET
Intelligent Technology. Better Future. FDS4897C Dual N & P-Channel PowerTrench® MOSFET, 40V Product Overview For complete documentation, see the data sheet. These dual N- and P-Channel enhancement mode power field effect transistors are produced using an advanced PowerTrench®
Technical Specifications. onsemi FDS4897C technical specifications, attributes, and parameters. Trans MOSFET N/P-CH 40V 6.2A/4.4A 8-Pin SOIC T/R / MOSFET N/P-CH 40V 8-SOIC.
- Onsemi
- Tin
- SOIC
- Surface Mount
FDS4897C Product details. General Description. These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Features.
FDS4897C Rev C(W) www.fairchildsemi.com Electrical Characteristics T A = 25°C unless otherwise noted FD Symbol Parameter Test Conditions Type Min Typ Max Units Drain-Source Avalanche Ratings (Note 3) 89 E AS Drain-Source Avalanche V DD = 40 V, I D = 7.3 A, L = 1 mH Q1 27 mJ Energy (Single Pulse) V DD = –40 V, I
