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Description: MOSFET SSOT-8 N-CH DUAL 20V. Lifecycle: Obsolete. ECAD Model: Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model. Compare Product. Add To Project | Add Notes. Availability. Stock: Not Available. Specifications.
- onsemi
- Si
- MOSFET
Features. • 4.5 A, 20 V. RDS (ON) = 0.022 Ω @ VGS = 4.5 V RDS (ON) = 0.028 Ω @ VGS = 2.5 V. • Low gate charge (16.2nC typical). • Fast switching speed. • High performance trench technology for extremely low RDS (ON). • Small footprint (38% smaller than a standard SO-8);low profile package (1 mm thick); power handling capability similar to SO-8.
- FDR8305 Download
- 8 Pages
- 215.81 Kbytes
- FDR8305
DRV8305 PWM 4.4 to 45 V MCU N-Channel MOSFETs Gate Drive Sense 3-Phase Brushless Pre-Driver SPI nFAULT Shunt Amps M EN_GATE Protection Shunt Amps LDO Product
- 1016KB
- 59
Features. • 4.5 A, 20 V. RDS (ON) = 0.022 Ω @ VGS = 4.5 V. R DS (ON) = 0.028 Ω @ VGS = 2.5 V. • Low gate charge (16.2nC typical). • Fast switching speed. • High performance trench technology for extremely. low R DS (ON). • Small footprint (38% smaller than a standard SO-8);low. profile package (1 mm thick); power handling capability.
Additional Resources. Order today, ships today. FDR8305N – Mosfet Array 20V 4.5A 800mW Surface Mount SuperSOT™-8 from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
- onsemi
- PowerTrench®
- Tape & Reel (TR)
FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET. 1999 Fairchild Semiconductor Corporation. Electrical Characteristics . TA = 25°C unless otherwise noted. Symbol. Parameter. Off Characteristics. BVDSS Drain-Source Breakdown Voltage ∆BVDSS TJ ∆ IDSS IGSSF.
Download FDR8305 Datasheet. File Size: 215.81 Kbytes. Part #: FDR8305. Description: Dual N-Channel 2.5V Specified PowerTrench MOSFET. Manufacturer: Fairchild Semiconductor.
