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Features. • 21 A, 30 V. RDS (ON) = 15.5 mW @ VGS = 10 V RDS (ON) = 23.0 mW @ VGS = 4.5 V. • Includes SyncFET Schottky body diode. • Low gate charge (11nC typical) • High performance trench technology for extremely low RDS (ON) and fast switching. • High power and current handling capability. Similar Part No. - FDP6690. More results.
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General Description. Features. This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.
View FDB6690S, FDP6690S by onsemi datasheet for technical specifications, dimensions and more at DigiKey.
FDP6690 30V N-channel Powertrench Syncfet . This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.
Overview. This N-Channel Logic Level MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are ...
FDP6690 datasheet, FDP6690 pdf, FDP6690 data sheet, datasheet, data sheet, pdf, Fairchild Semiconductor, 30V N-Channel PowerTrench SyncFET
FDP6690S datasheet, FDP6690S pdf, FDP6690S data sheet, datasheet, data sheet, pdf, Fairchild Semiconductor, 30V N-Channel PowerTrench SyncFET TM