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FDP6670AS_NL Product details. General Description. This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS (ON) and low gate charge.
FDP6670AS/FDB6670AS 30V N-Channel PowerTrench® SyncFET™ General Description This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low R DS(ON) and low gate charge. The FDP6670AS
This 30V MOSFET is designed to. maximize power conversion e fficiency, providing a low. R DS (ON) and low gate charge. The FDP6670AS. includes an integrated Schottky diode using Fairchild’s. monolithic SyncFET technology. The performa nce of. the FDP6670AS/FDB6670AS as the low-side switch in. a synchronous rectifier is indistinguishable from the.
Description. isc N-Channel MOSFET Transistor. FDP6670AS Datasheet (HTML) - Inchange Semiconductor Company Limited. FDP6670AS Product details. FEATURES. ·Drain Current –ID= 62A@ TC=25℃. ·Drain Source Voltage- : VDSS= 30V (Min) ·Static Drain-Source On-Resistance. : RDS (on) = 8.5mΩ (Max)@VGS= 10V. ·100% avalanche tested.
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FDP6670AS_NL 30V N-channel Powertrench Syncfet . This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low and low gate charge.
FDP6670 AS_NL. 100Kb / 6P. 30V N-Channel PowerTrench SyncFET. FDP6670 S. 93Kb / 5P. 30V N-Channel PowerTrench SyncFET. Inchange Semiconductor ... FDP6670 S. 355Kb / 3P.
The FDP6670AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDP6670AS/FDB6670AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP6670A/FDB6670A in parallel with a Schottky diode.