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  1. 2 Items. Order today, ships today. FDN361AN – N-Channel 30 V 1.8A (Ta) 500mW (Ta) Surface Mount SOT-23-3 from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

  2. 1.8 A. Rds On - Drain-Source Resistance: 72 mOhms. Vgs - Gate-Source Voltage: - 20 V, + 20 V. Minimum Operating Temperature: - 55 C. Maximum Operating Temperature: + 150 C.

    • onsemi
    • Si
    • MOSFET
  3. General Description. This N-Channel Logic Level MOSFET is produced using. Fairchild Semiconductor's PowerTrench process that has. been especially tailored to minimize the on-state resistance. and yet maintain low gate charge for superior switching. performance. April 1999. Features. • 1.8 A, 30 V. RDS (on) = 0.100 Ω @ VGS = 10 V.

  4. Features. Low gate charge ( 2.1nC typical ). Fast switching speed. High performance trench technology for extremely low R . High power version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability.

  5. This N-Channel Logic Level MOSFET is produced using. Fairchild Semiconductor's PowerTrench process that has. been especially tailored to minimize the on-state resistance. and yet maintain low gate charge for superior switching. performance. April 1999. Features. • 1.8 A, 30 V. RDS (on) = 0.100 Ω@ VGS = 10 V. R DS (on) = 0.150 Ω @ VGS = 4.5 V.

  6. FDN361AN onsemi / Fairchild MOSFET SSOT-3 N-CH 30V datasheet, inventory & pricing.

  7. Features. • 1.8 A, 30 V. RDS (on) = 0.100 Ω @ VGS = 10 V RDS (on) = 0.150 Ω @ VGS = 4.5 V. • Low gate charge ( 2.1nC typical ). • Fast switching speed. • High performance trench technology for extremely low RDS (on). • High power version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability.

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