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FDN358P. General Description. This P−Channel Logic Level MOSFET is produced using onsemi. advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance.
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Order today, ships today. FDN358P – P-Channel 30 V 1.5A (Ta) 500mW (Ta) Surface Mount SOT-23-3 from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
- $0.45
- onsemi
- Onsemi
- Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Overview. Technical Documentation. Overview. This P-Channel Logic Level MOSFET is produced using an advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior sw itching performance.
Part #: FDN358. Download. File Size: 85Kbytes. Page: 4 Pages. Description: P-Channel Logic Level Enhancement Mode Field Effect Transistor. Manufacturer: Fairchild Semiconductor.
- FDN358 Download
- 4 Pages
- 85.26 Kbytes
- FDN358
Technical Specifications. Physical. Case/PackageSOT-23. MountSurface Mount. Number of Pins3. Weight30 mg. Technical. Continuous Drain Current (ID)1.5 A. Current Rating-1.5 A. Drain to Source Breakdown Voltage-30 V. Drain to Source Resistance125 mΩ. Drain to Source Voltage (Vdss)-30 V. Dual Supply Voltage-30 V. Element ConfigurationSingle.
- Onsemi
- $0.05 - $26.81
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FDN358P. Single P-Channel, Logic Level, PowerTrench MOSFET. General Description. This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Details, datasheet, quote on part number: FDN358. Features, Applications. FDN358P P-Channel Logic Level Enhancement Mode Field Effect Transistor. SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.