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FDN338P is a P-Channel MOSFET with a low voltage POWERTRENCH process and optimized for battery power management applications. It has a fast switching speed, high performance trench technology, and low RDS(ON) of 115 m @ VGS = –4.5 V or 155 m @ VGS = –2.5 V. See features, specifications, ordering information, and ordering options.
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Overview. Technical Documentation. Overview. This P-Channel 2.5V specified MOSFET uses an advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Waiting. Product Overview. Applications. Features. –1.6 A, –20 V. R DS (ON) = 115 mΩ @ VGS = –4.5 V. R DS (ON) = 155 mΩ @ VGS = –2.5 V.
FDN338PCT-NDR. FDN338PDKR. FDN338PTR-NDR. Standard Package. 3,000. Order today, ships today. FDN338P – P-Channel 20 V 1.6A (Ta) 500mW (Ta) Surface Mount SOT-23-3 from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
- $0.52
- onsemi
- Onsemi
- Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Mar 22, 2024 · FDN338P. Images are for reference only. See Product Specifications. Mouser #: 512-FDN338P. Mfr. #: FDN338P. Mfr.: onsemi / Fairchild. Customer #: Description: MOSFET SSOT-3 P-CH -20V. Datasheet: FDN338P Datasheet (PDF) ECAD Model: Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.
- Onsemi / Fairchild
- MOSFET
- onsemi
FDN338P Product details. General Description. This P-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features. · –1.6 A, –20 V. RDS (ON) = 115 mW @ VGS = –4.5 V. RDS (ON) = 155 mW @ VGS = –2.5 V. · Fast switching speed.
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- FDN338P
This P-Channel 2.5V specified MOSFET uses an advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features. –1.6 A, –20 V. RDS(ON)= 115 mΩ @ VGS = –4.5 V. RDS(ON) = 155 mΩ @ VGS = –2.5 V. Fast switching speed. High performance trench technology for extremely low RDS(ON)
General Description. Features. This P-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. · –1.6 A, –20 V. November 2013. RDS(ON) = 115 mW @ VGS = –4.5 V RDS(ON) = 155 mW @ VGS = –2.5 V. Applications · Fast switching speed .