IDSS. Zero Gate Voltage Drain Current. VDS = –16 V, VGS = 0 V. -. -. –1. μA. IGSSF. Gate–Body Leakage, Forward. VGS = 8 V, VDS = 0 V.
FDN338 onsemi Transistors parts available at DigiKey.
This P-Channel 2.5V specified MOSFET uses an advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
FDN338 Datasheet. Part #: FDN338. Datasheet: 85Kb/4P. Manufacturer: Fairchild Semiconductor. Description: P-Channel Logic Level Enhancement Mode Field ...
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5PCS FDN338P MOSFET P-CH 20V 1,6A SSOT3 338 FDN338 · About the seller · Seller feedback (21,272) · What does this price mean? · Price details · New · Best offer.
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9PCS FDN338P MOSFET P-CH 20V 1.6A SSOT3 338 FDN338 ; Item Number. 372271870455 ; Brand. Chips Gate ; MPN. Does not apply ; Accurate description. 4.9 ; Reasonable ...
This P-Channel 2.5V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
In stock
20 PCS FDN338P Marking: 338 SOT-23 FDN338P-NL FDN338 -20V/-1.6A P-Channel Logic Level Enhancement Mode Field Effect Transistor. Delivery. Shipping: US $1.68.
FDN338P P-Ch 20V Fast Switching MOSFETs Description Product Summary The FDN338P is the high cell density trenched P-VDS -20 V ch MOSFETs, which provides ...