Specifications ; Typical Turn-Off Delay Time: 25 ns ; Typical Turn-On Delay Time: 6 ns ; Width: 6.22 mm ; Part # Aliases: FDD6N50TM_WS.
FDD6N50TM-WS ; Input Capacitance (Ciss) (Max) @ Vds. 9400 pF @ 25 V ; FET Feature. - ; Power Dissipation (Max). 89W (Tc) ; Operating Temperature. -55°C ~ 150°C (TJ).
FDD6N50TM-WS /. FDU6N50TU. Unit. RθJC. Thermal Resistance, Junction-to-Case, Max ... FDD6N50TM-WS. FDD6N50S. DPAK. Tape and Reel. 330 mm. 16 mm. 2500 units.
This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is ...
FDD6N50TM-WS onsemi $1.5035 - 500V 6A 900mΩ@3A,10V 89W 5V@250uA null TO-252AA MOSFETs ROHS datasheet, price, inventory C903582.
FDD6N50TM-WS ; Description: 500V 6A 900mΩ@3A,10V 89W 5V@250uA 1PCSNChannel TO-252AA MOSFETs ROHS ; Datasheet: Download ; Source: JLCPCB ; Assembly Type: SMT ...
Part #: FDD6N50TM-WS. Download. File Size: 463Kbytes. Page: 9 Pages. Description: N-Channel UniFETTM MOSFET500 V, 6 A, 900 m廓.
FDD6N50TM_WS ; Ord.number: T413500 ; Product info: Unavailable ; Manufacturer (Brand):, FAIRCHILD ; Documents. No documents to download.
FDD6N50TM is Obsolete and no longer manufactured. Available Substitutes: MFR Recommended. FCD600N65S3R0. onsemi. In Stock: 4,937. Unit Price: $1.74000.
₹71.49 to ₹96.83
The FDD6N50TM_WS is an UniFET™ N-channel high voltage MOSFET produced based on planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state ...