Specifications ; Rds On - Drain-Source Resistance: 900 mOhms ; Vgs - Gate-Source Voltage: - 30 V, + 30 V ; Minimum Operating Temperature: - 55 C ; Maximum Operating ...
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FDD6N50TF MOSFET. Datasheet pdf. Equivalent. Type Designator: FDD6N50TF Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation ...
FDD6N50TF Fairchild datasheet PDF, 10 pages, view FDD6N50TF Specifications online, Trans MOSFET N-CH 500V 6A 3Pin(2+Tab) DPAK T/R.
FDD6N50TF - onsemi ; Power Dissipation (Max). 89W (Tc) ; Operating Temperature. -55°C ~ 150°C (TJ) ; Mounting Type. Surface Mount ; Supplier Device Package. TO- ...
Discrete Semiconductor Products | Single FETs, MOSFETs ; TO-252-3 · FDD6N25TF. MOSFET N-CH 250V 4.4A DPAK. MOSFET N-CH 250V 4.4A DPAK, 0. Tape & Reel (TR). Cut ...
FDD6N50TF Specifications ; gate charge (qg) (max) @ vgs: 16.6 nC @ 10 V ; drain to source voltage (vdss):, 500 V ; input capacitance (ciss) (max) @ vds: 940 pF @ ...
FDD6N50TF. D-PAK. 380mm. 16mm. 2000. FDU6N50. FDU6N50TU. I-PAK. -. -. 70. Electrical Characteristics TC = 25°C unless otherwise noted. Symbol. Parameter.
Product Overview ; Part Number FDD6N50TF ; Manufacturer FAIRCHILD ; Packaging TO-252-DPAK ; Batch Number 16+ ; Inventory 90000.
FDD6N50TF Description Datasheet FET Type MOSFET N-Channel Metal Oxide FET Feature Standard Drain to Source Voltage (Vdss) 500V Current - Continuous Drain ...