FDD6606 onsemi | Discrete Semiconductor Products - DigiKey
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FDD6606 ; Input Capacitance (Ciss) (Max) @ Vds. 2400 pF @ 15 V ; FET Feature. - ; Power Dissipation (Max). 71W (Tc) ; Operating Temperature. -55°C ~ 175°C (TJ).
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching ...
FDD6606 MOSFET. Datasheet pdf. Equivalent. Type Designator: FDD6606 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum ...
Single N-channel MOSFET in a 5mm x 6mm LFPAK package designed for compact and efficient designs. ... Delivers -30V drain-to-source voltage, 2.7mΩ on-resistance at ...
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FET Type, MOSFET N-Channel Metal Oxide ; FET Feature, Logic Level Gate ; Drain to Source Voltage (Vdss), 30V ; Current - Continuous Drain (Id) @ 25 C · 75A ; Rds On ...
Part Number: FDD6606. Manufacturer: Fairchild Semiconductor. Series: *. Short Description: MOSFET N-CH 30V 75A D-PAK. Long Description: ...
30V N-Channel PowerTrench MOSFET, Datasheet, equivalent, pinout, replacement, pdf, complementary.
FDD6606 - 30V N-Channel PowerTrench MOSFET ; Part No. FDD6606 FDD6606NL ; Description, 30V N-Channel PowerTrench MOSFET ; File Size, 140.74K / 6 Page ; Maker
Download CAD models for the onsemi FDD6606. Available in over 22 CAD formats including: Altium, Eagle, OrCAD, KiCAD, PADS, and more.