VDS = 50 V, VGS = 0 V, TC = 150°C. −. −. 250. IGSS. Gate to Source Leakage Current. VGS = ±20 V. −. −. ±100. nA. ON CHARACTERISTICS. VGS(TH).
Starting TJ = 25°C, L = 8.58mH, IAS = 10A. Device Marking. Device. Package. Reel Size. Tape Width. Quantity. FDD10AN06A0.
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FDD10AN06A0 onsemi / Fairchild MOSFET 60V 50a .15 Ohms/VGS=1V datasheet, inventory, & pricing.
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Order today, ships today. FDD10AN06A0 – N-Channel 60 V 11A (Ta), 50A (Tc) 135W (Tc) Surface Mount TO-252AA from onsemi. Pricing and Availability on millions ...
N-Channel PowerTrench ® MOSFET 60V, 50A, 10.5mΩ.
FDD10AN06A0-F085 ; Input Capacitance (Ciss) (Max) @ Vds. 1840 pF @ 25 V ; FET Feature. - ; Power Dissipation (Max). 135W (Tc) ; Operating Temperature. -55°C ~ 175°C ...
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The FDD10AN06A0 is a N-channel MOSFET produced using PowerTrench® process. It has been designed specifically to improve the overall efficiency of DC-to-DC ...
Pricing and availability from all the top distributors and hundreds more. View FDD10AN06A0 Onsemi datasheet, CAD models, lifecycle, RoHS, alternates and ...
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, ...
FDD10AN06A0 MOSFET. Datasheet pdf. Equivalent. Type Designator: FDD10AN06A0 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum ...