This P−Channel 2.5 V specified MOSFET is produced using onsemi's advanced POWERTRENCH process that has been especially tailored to minimize the on−state ...
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FDC608PZ ; FET Type. P-Channel ; Technology. MOSFET (Metal Oxide) ; Drain to Source Voltage (Vdss). 20 V ; Current - Continuous Drain (Id) @ 25°C · 5.8A (Ta).
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Specifications ; Vds - Drain-Source Breakdown Voltage: 20 V ; Id - Continuous Drain Current: 5.8 A ; Rds On - Drain-Source Resistance: 30 mOhms ; Vgs - Gate-Source ...
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Overview. This P-Channel 2.5V specified MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize ...
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This P-Channel MOSFET has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
$9.99 2-day delivery 30-day returns
Apr 4, 2024 · FDC608PZ onsemi / Fairchild MOSFET -20V P-Channel 2.5V PowerTrench MOSFET datasheet, inventory & pricing.
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Buy FDC608PZ with fast, free shipping on qualifying orders. View datasheets, stock and pricing, or find other MOSFETs.
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The FDC608PZ is a 2.5V specified P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state ...
This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the ...
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The FDC608PZ is a 2.5V specified P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state ...