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SOT-23 Formed SMD Package PNP SILICON PLANAR EPITAXIAL TRANSISTOR Device Types CMBT8550 25V,800mA Equivalent MMBT8550 See the data sheet for CMBT8550 Home Devices
CMBT8550: Download CMBT8550 Click to view: File Size 174.53 Kbytes: Page 3 Pages : Manufacturer: CDIL [Continental Device India Limited] Direct Link: http://www.cdilsemi.com: Logo : Description PNP SILICON PLANAR EPITAXIAL TRANSISTOR
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- CMBT8550
Type Designator: CMBT8550. Material of Transistor: Si. Polarity: PNP. Maximum Collector Power Dissipation (Pc): 0.25 W. Maximum Collector-Base Voltage |Vcb|: 30 V. Maximum Collector-Emitter Voltage |Vce|: 25 V. Maximum Emitter-Base Voltage |Veb|: 6 V. Maximum Collector Current |Ic max|: 0.8 A. Max. Operating Junction Temperature (Tj): 125 °C.
PNP SILICON PLANAR EPITAXIAL TRANSISTOR CMBT8550 SOT-23 Formed SMD Package ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL UNITS Collector Base Voltage V CBO V Collector Emitter Voltage V CEO V Emitter Base Voltage V EBO V Collector Current Continuous I C mA Collector Dissipation @ T a=25ºC P C mW Operating and Storage Junction Temperature Range T ...
CMBT8550 datasheet, CMBT8550 pdf, CMBT8550 data sheet, datasheet, data sheet, pdf, Continental Device India Limited, 0.250W General Purpose PNP SMD Transistor. 25V Vceo, 0.800A Ic, 60 hFE.
Continental Device India Limited's CMBT8550 is pnp silicon planar epitaxial transistor in the bipolar transistors, gp bjt category. Check part details, parametric & specs updated 01 APR 2022 and download pdf datasheet from datasheets.com, a global distributor of electronics components.
CMBT8550C Datasheet, Equivalent, Cross Reference Search. Type Designator: CMBT8550C. Material of Transistor: Si. Polarity: PNP. Maximum Collector Power Dissipation (Pc): 0.25 W. Maximum Collector-Base Voltage |Vcb|: 30 V. Maximum Collector-Emitter Voltage |Vce|: 25 V. Maximum Emitter-Base Voltage |Veb|: 6 V.