Search Results
BYT52M VR = VRRM 1000 V Peak forward surge current tp = 10 ms, half sine wave IFSM 50 A Average forward current l = 10 mm IF(AV) 1.4 A On PC board IF(AV) 0.85 A Non repetitive reverse avalanche energy I(BR)R = 0.4 A BYT52J ER 10 mJ BYT52K ER 10 mJ BYT52M ER 10 mJ Junction and storage temperature range Tj = Tstg-55 to +175 °C
- 129KB
- 4
Order today, ships today. BYT52M-TR – Diode 1000 V 1.4A Through Hole SOD-57 from Vishay General Semiconductor - Diodes Division. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
- Vishay General Semiconductor-Diodes Division
VISHAY. Designed with optimized performance of forward voltage drops and hyperfast recovery times. Includes ESD protection, Zener, Schottky, and switching diodes housed in a ultra-small DFN package.
- Vishay Semiconductors
- Through Hole
- Vishay
- Rectifiers
Cross Sections of SUPERECTIFIER® Construction. Cross Sections of SUPERRECTIFIER® Construction. Datasheet. BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M. Fast Avalanche Sinterglass Diode. Markings. Diodes Group Body Marking. Marking. Packaging Information.
Description. Fast Silicon Mesa Rectifiers. BYT52M Datasheet (HTML) - Vishay Siliconix. BYT52M Product details. Features. • Glass passivated junction. • Hermetically sealed package. • Low reverse current. • Soft recovery characteristics. Applications. Fast rectifiers and switches. Similar Part No. - BYT52M. More results. Similar Description - BYT52M
- BYT52M Click to view
- 4 Pages
- 42.95 Kbytes
- BYT52M
Part #: BYT52M. Download. File Size: 114Kbytes. Page: 4 Pages. Description: Fast Avalanche Sinterglass Diode. Manufacturer: Vishay Siliconix.
Vishay Semiconductors. Customer No: Description: Rectifiers 1.4 Amp 1000 Volt 50 Amp IFSM. Datasheet: BYT52M-TAP Datasheet. ECAD Model: Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model. Compare Product. Add To Project | Add Notes. Availability. Stock: Non-Stocked. Factory Lead Time: 12 Weeks.