BCR 512 B6327 ; Resistor - Emitter Base (R2). 4.7 kOhms ; DC Current Gain (hFE) (Min) @ Ic, Vce. 60 @ 50mA, 5V ; Vce Saturation (Max) @ Ib, Ic. 300mV @ 2.5mA, 50mA.
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BCR 512 E6327 Infineon Technologies Digital Transistors NPN Silicon Digital TRANSISTOR datasheet, inventory, & pricing.
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BCR 512 B6327 ; Transistor type: NPN-Prebias ; Collector-emitter voltage: 50V ; Collector current: 500mA ; R1/R2: 1 ; Package: TO-236-3|SC-59|SOT-23-3.
New Original BCR 512 B6327 PG-SOT23 electronic components Support BOM Fast delivery ; Variations. Specification: 1. SOT-23 ; Customizations. Customized logo. 1 ...
OEMstron datasheets are available at OEMstron. They cover BCR 512 B6327 part numbers, and help you learn more about the products.
BCR 512 B6327 ; Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 100MHz 330mW Surface Mount SOT-23-3 · 60 @ 50mA, 5V · 100nA (ICBO) · 500mA · BCR512.
Nov 15, 2023 · BCR 512 B6327 Infineon datasheet PDF, 3 pages, view BCR 512 B6327 User Reference Manual Guide & Specifications online, TRANS PREBIAS NPN ...
BCR 512 B6327 Infineon Technologies ; Mounting Type: Surface Mount ; Transistor Type: NPN - Pre-Biased ; Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA