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BCR 108 B6327 ; Voltage - Collector Emitter Breakdown (Max). 50 V ; Resistor - Base (R1). 2.2 kOhms ; Resistor - Emitter Base (R2). 47 kOhms ; DC Current Gain (hFE) ...
BCR 108 B6327 from www.digikey.in
BCR 108 B6327 ; Product Status. Obsolete ; Transistor Type. NPN - Pre-Biased ; Current - Collector (Ic) (Max). 100 mA ; Voltage - Collector Emitter Breakdown (Max).
Internal Part Number, EIS-BCR 108 B6327 ; Lead Free Status / RoHS Status, Lead free / RoHS Compliant ; Moisture Sensitivity Level (MSL), 1 (Unlimited) ; Production ...
Aug 19, 2011 · NPN Silicon Digital Transistor. • Switching circuit, inverter, interface circuit, driver circuit. • Built in bias resistor (R1=2.2 kΩ, ...
Technical Details. Series:--; Packaging:Tape & Reel (TR); Part Status:Obsolete; Transistor Type:NPN - Pre-Biased; Current - Collector (Ic) (Max):100mA ...
In stock
BCR 108 E6327 Infineon Technologies Digital Transistors AF TRANS DIGITAL BJT NPN 50V 100MA datasheet, inventory, & pricing.
Missing: B6327 | Show results with:B6327
BCR 108 B6327 — TRANSISTOR NPN DGTL SOT-23 ; Resistor - Emitter Base (R2) (Ohms), 47K ; DC Current Gain (hFE) (Min) @ Ic, Vce, 70 @ 5mA, 5V ; Vce Saturation (Max) ...
BCR 108 B6327 Infineon Technologies ; Mounting Type: Surface Mount ; Transistor Type: NPN - Pre-Biased ; Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
BCR 108 B6327, manufactured by Infineon and distributed by Worldway Electronics. It's category belong to Electronic Components ICs. It is applied to many fields ...
BCR 148 B6327 Specifications: Transistor Type: NPN - Pre-Biased ; Voltage - Collector Emitter Breakdown (Max): 50V ; Current - Collector (Ic) (Max): 100mA ...