Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be.
These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount ...
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BC857CDW1T1 Product details ... These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed ...
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Nov 27, 2023 · BC857CDW1T1 ON Semiconductor datasheet PDF, 6 pages, view BC857CDW1T1 Specifications online, SC-88 PNP 45V 0.1A.
Download CAD models for the onsemi BC857CDW1T1. Available in over 22 CAD formats including: Altium, Eagle, OrCAD, KiCAD, PADS, and more.
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The Dual PNP Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT-363/SC-88, which is designed for low power ...
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Specifications ; Emitter- Base Voltage VEBO: 5 V ; Collector-Emitter Saturation Voltage: 650 mV ; Maximum DC Collector Current: 100 mA ; Pd - Power Dissipation: 380 ...
Part Number, BC857CDW1T1. Manufacturer, ON Semiconductor. Description, Dual General Purpose Transistors. Published, Mar 23, 2005. Datasheet, PDF File ...
Characteristic. Symbol. Max. Unit. Total Device Dissipation. P D. 380. mW. Per Device. 250. mW. FR– 5 Board, (1) TA = 25°C. Derate above 25°C.