APTGF150DH120G Power IGBT Transistor from Microchip Configuration Asymmetrical Bridge; Voltage V 1200; Current A 150; datasheet, pricing & availability.
APTGF150DH120G Datasheet by Microchip Technology · 1-6 · Unit · Collector - Emitter Breakdown Voltage 1200 V · = 25°C 200 · Continuous Collector Current Tc = 80°C 1 ...
Features. • Non Punch Through (NPT) Fast IGBT. - Low voltage drop. - Low tail current. - Switching frequency up to 50 kHz. - Soft recovery parallel diodes.
New Original APTGF150DH120G SP6 electronic components Support BOM Fast delivery ; Variations. Package: 1,D/C: 1. Original standard. NEW ; Customizations.
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APTGF150DH120G Features Non Punch Through (NPT) Fast IGBT-Low voltage drop-Low tail current-Switching frequency up to 50 kHz-Soft recovery parallel di.
APTGF150DH120G · MICROSEMI-APTGF150DH120G Datasheet 248Kb / 5P, Asymmetrical - Bridge NPT IGBT Power Module. More results. Similar Description - APTGF150DH120 ...
APTGF150DH120G Asymmetrical - Bridge NPT IGBT Power Module VBUS Q1 G1 CR3 www.DataSheet4U.com VCES = 1200V IC = 150A @ Tc = 80°C Application Welding ...
APTGF150DH120G Specifications: Polarity: N-Channel ; Package Type: ROHS COMPLIANT, SP3, 25 PIN ; Number of units in IC: 2 Phase leg NPT IGBT Power Module ...
APTGF150H120G ; Package. Bulk ; Product Status. Obsolete ; IGBT Type. NPT ; Configuration. Full Bridge Inverter ; Voltage - Collector Emitter Breakdown (Max). 1200 V.
