Super junction MOSFET Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated IGBT3.
APTCV50H60T3G Microchip Technology IGBT Modules PM-MOSFET-COOLMOS-SP3 datasheet, inventory, & pricing.
Tc = 25°C. 49. A. Tc = 80°C. 38. IDM. Pulsed Drain current. 130. VGS. Gate - Source Voltage. ±20. V. RDSon. Drain - Source ON Resistance.
APTCV50H60T3G (#75896) ; Package Carrier: Tube ; Unit. Collector-Emitter Breakdown Voltage (VGE = 0 V), V(BR) · 600, V ; V · Alphanumeric Parameter, Value ; Value ...
APTCV50H60T3G ; Next Ship Date: 04-Jan-2025 ; Match Type. Original Part ; Match Type. Suggested Functional Replacement ; Price. $99.44 or lower. More Pricing ...
Optimized conduction & switching losses. • Direct mounting to heatsink (isolated package). • Low junction to case thermal resistance.
APTCV50H60T3G New Original Electronic ComponentsIntegrated CircuitsIC Chips ... More on shipping and other trade services. Variations. Package: 1,D/C: 1, ...
Find APTCV50H60T3G by Microsemi Corp at Perfect Parts. Locate stock, product information, datasheets, and availability.
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APTCV50H60T3G. Have Questions?Ask An Expert. APTCV50H60T3G. No reviews. Manufactory: Microchip Technology. Part Number: APTCV50H60T3G. Availability: 60 In stock.
APTCV50H60T3G — IGBT TRENCH FULL BRIDGE SP3. Manufacturer, Microsemi-PPG. Harmful substances, RoHS Lead-free. Voltage - Collector Emitter Breakdown (Max), 600V.
Microsemi APTCV50H60T3G 100% New & Original, Great Prices and Fast Delivery.
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