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APT102GA60L Microchip Technology IGBT Transistors IGBT PT MOS 8 Single 600 V 102 A TO-264 datasheet, inventory, & pricing.
APT102GA60L. 600V. APT102GA60L. POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and ...
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APT102GA60L. RoHS Compliant View Datasheet. This device has Suggested Functional Replacement devices with better availability: View Replacements. Lead Count: 3.
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APT102GA60L ; Power - Max. 780 W ; Switching Energy. 1.354mJ (on), 1.614mJ (off) ; Input Type. Standard ; Gate Charge. 294 nC.
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MICROCHIP (MICROSEMI) APT102GA60L | Transistor: IGBT; 600V; 102A; 780W; TO264 - This product is available in Transfer Multisort Elektronik.
Part #: APT102GA60L. Download. File Size: 232Kbytes. Page: 6 Pages. Description: High Speed PT IGBT. Manufacturer: Microsemi Corporation.
APT102GA60L vs APT102GA60B2, APT102GA60L: Trans IGBT Chip N-CH 600V 183A 3-Pin(3+Tab) TO-264, APT102GA60B2: IGBT 600V 183A 780W TO247.
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Microchip APT102GA60L Single IGBTs 600 V ; Power - Max, 780 W ; Product Type, IGBT Transistors ; Voltage - Collector Emitter Breakdown (Max), 600 V ; Current - ...
Equivalent. Type Designator: APT102GA60L Type: IGBT Type of IGBT Channel: N-Channel Maximum Power Dissipation (Pc), W: 780
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Package Carrier: Tube ; Unit. Collector to Emitter Saturation Voltage, V · 2, V · Collector-Emitter Breakdown Voltage (VGE = 0 V), V(BR) · 600, V · Fall Time (ns), t ...