Symbol Parameter. Ratings. Unit. VCES. Collector-Emitter Voltage. 1200. Volts. VGE. Gate-Emitter Voltage. ±20. IC1. Continuous Collector Current @ TC = 25°C.
This device has Suggested Functional Replacement devices with better availability: View Replacements. Lead Count: 4. Package Type: SOT-227.
Electrical Rating, Symbol, Min, Typ, Max, Unit. Collector to Emitter Saturation Voltage, VCE(sat), 3.2, V. Collector-Emitter Breakdown Voltage (VGE = 0 V) ...
MICROCHIP (MICROSEMI) APT100GT120JRDQ4 | Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 67A; SOT227B - This product is available in Transfer Multisort ...
$45.29
Feb 3, 2024 · APT100GT120JRDQ4 User Reference Manual Guide Microsemi IGBT Transistor, IGBT Module 12 page, APT100GT120JRDQ4 Trans IGBT Module N-CH 1200V ...