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  1. AM1214-250 STMicroelectronics Bipolar Transistors - BJT datasheet, inventory, & pricing.

    • STMicroelectronics
    • M259
    • SMD/SMT
    • Bipolar Transistors-BJT
  2. The AM1214-250 is a rugged, Class C common base device designed for new L - Band medium & long pulse radar applications. Minimal amplitude droop over a long pulse of 500 microsec. is guaranteed by a thermal design incorporating an overlay site-ballasted die geometry. • REFRACTORY /GOLD METALLIZATION • EMITTER SITE BALLASTING

  3. Find the best pricing for STMicroelectronics AM1214-250 by comparing bulk discounts from distributors. Octopart is the world's source for AM1214-250 availability, pricing, and technical specs and other electronic parts.

    • Stmicroelectronics
    • 1
  4. www.datasheet4u.com am1214-250 rf power transistors l-band radar applications target data • refractory /gold metallization • emitter site ballasting • low rf thermal resistance • input/output matching • overlay geometry • metal/ceramic hermetic package • pout = 300 w min.

  5. Jan 27, 2023 · AM1214-250 STMicroelectronics Bipolar Transistors - BJT datasheet, inventory & pricing.

  6. Part #: AM1214-250. Description: RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS. File Size: 36.45 Kbytes. Manufacturer: STMicroelectronics.

  7. am1214-250 rf power transistors l-band radar applications • refractory /gold metallization • emitter site ballasting • low rf thermal resistance • input/output matching • overlay geometry • metal/ceramic hermetic package • pout = 300 w min. with 8.0 db gain • 1215-1400 mhz operation description the am1214-250 is a rugged, class ...