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2SC5193-T2 Product details. FEATURES. • Low Voltage Operation, Low Phase Distortion. • Low Noise. NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz. NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz. • Large Absolute Maximum Collector Current. IC = 100 mA. • Compact Mini Mold Package. EIAJ: SC-70. Similar Part No. - 2SC5193-T 2. More results.
2SC5193 Product details. NPN EPITAXIAL SILICON RF TRANSISTOR. FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION. 3-PIN SUPER MINIMOLD. FEATURES. • Low Voltage Operation, Low Phase Distortion. • Low Noise. NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz. NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz. • Large Absolute Maximum Collector Current.
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SILICON TRANSISTOR. 2SC5193. MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD. FEATURES. Low Voltage Operation, Low Phase Distortion. Low Noise. NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz. Large Absolute Maximum Collector Current. IC = 100 mA.
2SC5193-T2 Microwave Low Noise Amplifier NPN Silicon Epitaxial Transistor Compact Mini Mold . MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD. FEATURES. Low Voltage Operation, Low Phase Distortion Low Noise 1.5 dB TYP. @ VCE = 7 mA, = 2 GHz 1.7 dB TYP. @ VCE = 3 mA, = 2 GHz Large Absolute Maximum
2SC5193-T2 datasheet, 2SC5193-T2 pdf, 2SC5193-T2 data sheet, datasheet, data sheet, pdf, NEC, MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD
DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC5193 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP.
2sc5193-t1 220kb / 9p: npn silicon rf transistor 2004: nec: 2sc5193-t2 65kb / 12p: microwave low noise amplifier npn silicon epitaxial transistor compact mini mold search partnumber : start with "2sc5193"-total : 66 ( 1/4 page) nec: 2sc5193-t1: 65kb / 12p: microwave low noise amplifier npn silicon epitaxial transistor compact mini mold renesas ...
+-+NEC&oid=1&h=367&w=283&turl=https%3A%2F%2Ftse1.mm.bing.net%2Fth%3Fid%3DOIP.MXQilQ520NN7r-shTAX8GQAAAA%26pid%3DApi&tt=2SC5193+Datasheet(PDF)+-+NEC&sigr=HCA4QJUXe8lv&sigit=XktlYPOrVi4V&sigi=C2ujEItay87l&sign=3Zkp6ysTSOWV&sigt=3Zkp6ysTSOWV "2SC5193 Datasheet(PDF) - NEC")
+%7C+TOSHIBA+%7C+%E5%9C%A8%E5%BA%AB%E6%83%85%E5%A0%B1+%E6%97%AD%E3%82%A8%E3%83%B3%E3%82%B8%E3%83%8B%E3%82%A2%E3%83%AA%E3%83%B3%E3%82%B0%EF%BC%88%E6%A0%AA%EF%BC%89&oid=3&h=960&w=1280&turl=https%3A%2F%2Ftse1.mm.bing.net%2Fth%3Fid%3DOIP.-ou8iw3VuzWdEcrqAKnLfgHaFj%26pid%3DApi&tt=2SC5198-O(Q)+%7C+TOSHIBA+%7C+%E5%9C%A8%E5%BA%AB%E6%83%85%E5%A0%B1+%E6%97%AD%E3%82%A8%E3%83%B3%E3%82%B8%E3%83%8B%E3%82%A2%E3%83%AA%E3%83%B3%E3%82%B0%EF%BC%88%E6%A0%AA%EF%BC%89&sigr=RFdpWb9CJ.MO&sigit=FxxOkH4zkLVZ&sigi=7dLPYBRn5DFi&sign=TgI6S4Bpjt0E&sigt=TgI6S4Bpjt0E "2SC5198-O(Q) | TOSHIBA | 在庫情報 旭エンジニアリング（株）")
+%7C+TOSHIBA+%7C+%E5%9C%A8%E5%BA%AB%E6%83%85%E5%A0%B1+%E6%97%AD%E3%82%A8%E3%83%B3%E3%82%B8%E3%83%8B%E3%82%A2%E3%83%AA%E3%83%B3%E3%82%B0%EF%BC%88%E6%A0%AA%EF%BC%89&oid=5&h=960&w=1280&turl=https%3A%2F%2Ftse1.mm.bing.net%2Fth%3Fid%3DOIP.li5oBn0ECWHgMw_J6UrekQHaFj%26pid%3DApi&tt=2SC5198-O(Q)+%7C+TOSHIBA+%7C+%E5%9C%A8%E5%BA%AB%E6%83%85%E5%A0%B1+%E6%97%AD%E3%82%A8%E3%83%B3%E3%82%B8%E3%83%8B%E3%82%A2%E3%83%AA%E3%83%B3%E3%82%B0%EF%BC%88%E6%A0%AA%EF%BC%89&sigr=RFdpWb9CJ.MO&sigit=A.EHvo.z88rp&sigi=Q0e.SA4obIHs&sign=TgI6S4Bpjt0E&sigt=TgI6S4Bpjt0E "2SC5198-O(Q) | TOSHIBA | 在庫情報 旭エンジニアリング（株）")
