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  1. 2SC4097. NPN, SOT-323, 32V 0.5A, Driver Transistor. Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market. New alternative products may be available. Data Sheet Buy * Sample *.

  2. 2SC4097 : Transistors. Medium Power Transistor (32V, 500mA)Datasheet. lOutline Parameter ValueUMT3. VCEO32V. IC500mA. 2SC4097 SOT-323 . lFeatures 1)High ICMax. ICMax.=0.5A 2)Low VCE(sat). Optimal for low voltage operation. 3)Complements the 2SA1577. lInner circuit. lApplication DRIVING CIRCUIT,LOW FREQUENCY AMPLIFIER.

  3. View 2SC4097 by Rohm Semiconductor datasheet for technical specifications, dimensions and more at DigiKey.

  4. 2SC4097 Medium Power Transistor (32V, 500mA) Datasheet lOutline Parameter Value UMT3 VCEO 32V IC 500mA SOT-323 SC-70 lFeatures 1)High ICMax. ICMax.=0.5A 2)Low VCE(sat). Optimal for low voltage operation. 3)Complements the 2SA1577. lInner circuit lApplication DRIVING CIRCUIT,LOW FREQUENCY AMPLIFIER

  5. 2SC4097 : Transistors. Medium Power Transistor (32V, 0.5A) 2SC4097. zFeatures. zExternal dimensions (Units : mm) High ICMax. ICMax. = 0.5A. Low VCE(sat). Optimal for low voltage operation. Complements the 2SA1577. zStructure. Epitaxial planar type NPN silicon transistor. 2SC4097. 2.0±0.2 1.3±0.1 0.9±0.1. 0.65 0.65 0.2 0.7±0.1. (1) (2) 0 ~ 0.1. (3)

  6. 2SC4097 NPN Silicon Epitaxial Transistors PD Continuous Collector Current IC 500 mA Power Dissipation Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage VEBO 5 V Collector-Base Voltage VCBO 40 V • Operating Junction Temperature Range: -55℃ to +150℃ • Storage Temperature Range: -55℃ to +150℃ • Thermal Resistance: 625℃/W ...

  7. Features. 1) Very Low VCE (sat). VCE (sat)= u00100.1V (Typ.) ̈́IC/ IB= 500УA / 50mAͅ. 2) High current capacity in compact package. 3) Complements the 2SB1197K. Similar Part No. - 2SC4097. More results. Similar Description - 2SC4097. More results. About Rohm. ROHM Semiconductor is a Japanese semiconductor company that was founded in 1958.