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2SC3392 Product details. High-Speed Switching Applications. Features. • Adoption of FBET process. • High breakdown voltage : VCEO= (–)50V. • Large current capacitiy and high fT. • Very small-sized package permitting sets to be small sized, slim. Similar Part No. - 2SC3392. More results. Similar Description - 2SC3392. More results.
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2156-2SC3392-5-TB-E. Standard Package. 3,806. Order today, ships today. 2SC3392-5-TB-E – Bipolar (BJT) Transistor from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
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Sep 1, 2020 · Ordering number : ENN1421B. 2SA1338 / 2SC3392. PNP/NPN Epitaxial Planar Silicon Transistor. High-Speed Switching Applications. Features. Adoption of FBET process. · High breakdown voltage : V CEO=(–)50V. Large current capacitiy and high T. f · Ultrasmall-sized package permitting sets to be small- Package Dimensions. unit:mm. 2018B.
Details, datasheet, quote on part number: 2SC3392. Features, Applications. Adoption of FBET process. High breakdown voltage : VCEO= ()50V. Large current capacitiy and high fT. Ultrasmall-sized package permitting sets to be smallsized, slim. Specifications.
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2SC3392 Datasheet, Equivalent, Cross Reference Search. Type Designator: 2SC3392. Material of Transistor: Si. Polarity: NPN. Maximum Collector Power Dissipation (Pc): 0.2 W. Maximum Collector-Base Voltage |Vcb|: 60 V. Maximum Collector-Emitter Voltage |Vce|: 50 V. Maximum Emitter-Base Voltage |Veb|: 5 V.
Part Number. 2SC3392. Manufacturers. Sanyo Semicon Device. Description. PNP/NPN Epitaxial Planar Silicon Transistors. Datasheet. 2SC3392 Datasheet (PDF) Ordering number:EN1421A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1338/2SC3392 High-Speed Switching Applications Features · Adoption of FBET process. · High breakdown voltage : VCEO= (–)50V.
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