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Type Designator: 2SB507. Material of Transistor: Si. Polarity: PNP. Maximum Collector Power Dissipation (Pc): 30 W. Maximum Collector-Base Voltage |Vcb|: 60 V. Maximum Collector-Emitter Voltage |Vce|: 60 V. Maximum Emitter-Base Voltage |Veb|: 5 V.
2SB507: 112Kb / 3P: POWER TRANSISTORS(3.0A,60V,30W) GUANGDONG HOTTECH INDUS... 2SB507: 471Kb / 3P: BIPOLAR TRANSISTOR (PNP) Wing Shing Computer Com... 2SB507: 25Kb / 1P: PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) Savantic, Inc. 2SB507: 101Kb / 3P: Silicon PNP Power Transistors Dc Components: 2SB507: 196Kb / 1P: TECHNICAL ...
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Part #: 2SB507. Download. File Size: 112Kbytes. Page: 3 Pages. Description: POWER TRANSISTORS(3.0A,60V,30W). Manufacturer: Mospec Semiconductor.
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Part #: 2SB507. Datasheet: 112Kb/3P. Manufacturer: Mospec Semiconductor. Description: POWER TRANSISTORS (3.0A,60V,30W). 17 Results. Datasheet: 192Kb/3P.
Aug 15, 2022 · Lision Technology Inc's 2SB507 is a to-220 bipolar junction gp bjt transistors polarity. in the bipolar transistors, gp bjt category. Check part details, parametric & specs updated 15-AUG-2022 and download pdf datasheet from datasheets.com, a global distributor of electronics components.
Type Designator: 2SB507E. Material of Transistor: Si. Polarity: PNP. Maximum Collector Power Dissipation (Pc): 30 W. Maximum Collector-Base Voltage |Vcb|: 60 V. Maximum Collector-Emitter Voltage |Vce|: 60 V. Maximum Emitter-Base Voltage |Veb|: 5 V.
Characteristics of 2SB507 Transistor. Type: PNP. Collector-Emitter Voltage, max: -60 V. Collector-Base Voltage, max: -60 V. Emitter-Base Voltage, max: -5 V. Collector Current − Continuous, max: -3 A. Collector Dissipation: 30 W. DC Current Gain (h fe ): 40 to 320. Transition Frequency, min: 5 MHz.
