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The 2SA1400-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES • High Voltage: VCEO = −400 V • High Speed: tf ≤ 1.0 μs • Complement to 2SC3588-Z ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to base voltage VCBO −400 V Collector to emitter voltage VCEO −400 V
The 2SA1400-Z Bipolar Power Transistors is only supported for customers who have already adopted these products.
Part #: 2SA1400-Z. Download. File Size: 749Kbytes. Page: 6 Pages. Description: SILICON POWER TRANSISTOR. Manufacturer: Renesas Technology Corp.
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- 2SA1400-Z
NEC Corporation is a Japanese multinational information technology and electronics company. The company was founded in 1899 and is headquartered in Tokyo, Japan. NEC provides a wide range of products and services including information technology, telecommunications, and electronics. Its portfolio includes computer hardware, software, and ...
Description. Support is limited to customers who have already adopted these products. A wide variety of products are rolled out, for example, for uses at high temperature (up to 175°C applicable), high power, and low Vce (sat), and others.
Oct 15, 2022 · Renesas Electronics's 2SA1400-Z-T1N is a trans gp bjt pnp 400v 0.5a 2000mw 3-pin(2+tab) to-252 t/r. in the bipolar transistors, gp bjt category. Check part details, parametric & specs updated 15-OCT-2022 and download pdf datasheet from datasheets.com, a global distributor of electronics components.
2SA1400 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SA1400 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 10 W Maximum Collector-Base Voltage |Vcb|: 400 V Maximum Collector Current |Ic max|: 0.5 A Max. Operating Junction Temperature (Tj): 125 °C Forward Current Transfer Ratio (hFE), MIN: 40
