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V CEO(sus) = 80 Vdc (Min) - 2N6036, 2N6039; Forward Biased Second Breakdown Current Capability I S/b = 1.5 Adc @ 25 Vdc; Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication; Space-Saving High Performance-to-Cost Ratio TO-225AA Plastic Package; Pb-Free Packages are Available
2N6036 STMicroelectronics Darlington Transistors PNP Darlington datasheet, inventory, & pricing.
Order today, ships today. 2N6036 – Bipolar (BJT) Transistor PNP - Darlington 80 V 4 A 40 W Through Hole SOT-32 from STMicroelectronics. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
2N6036 Product details. The 2N6037, 2N6038 and 2N6039 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec To-126 plastic package. The complementary PNP types are the 2N6034, 2N6035 and 2N6036 respectively.
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MAXIMUM RATINGS: (TC=25°C unless otherwise noted) 2N6034 2N6035 2N6036 SYMBOL 2N6037 2N6038 2N6039 UNITS Collector-Base Voltage VCBO 40 60 80 V Collector-Emitter Voltage VCEO 40 60 80 V Emitter-Base Voltage VEBO 5.0 V Continuous Collector Current IC 4.0 A Peak Collector Current ICM 8.0 A Continuous Base Current IB 100 mA
2N6036 2N6039. COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS. 2N6036 IS A STMicroelectronics PREFERRED SALESTYPE. COMPLEMENTARY PNP - NPN DEVICES. INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS. GENERAL PURPOSE SWITCHING. GENERAL PURPOSE AMPLIFIER DESCRIPTION The 2N6036 and 2N6039 are complementary silicon power Darlington ...
2N6036 Product details. Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low−speed switching applications. Features. • ESD Ratings: Machine Model, C; > 400 V. Human Body Model, 3B; > 8000 V. • Epoxy Meets UL 94 V−0 @ 0.125 in. • Pb−Free Packages are Available*.
