This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features.
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1N5821 Taiwan Semiconductor Schottky Diodes & Rectifiers 3A, 30V, Schottky Rectifier datasheet, inventory, & pricing.
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1N5821 ; Voltage - DC Reverse (Vr) (Max). 30 V ; Current - Average Rectified (Io). 3A ; Voltage - Forward (Vf) (Max) @ If. 500 mV @ 3 A ; Speed. Fast Recovery =< ...
1N5820, 1N5821, 1N5822 www.vishay.com. Vishay General Semiconductor. Revision: 13-Aug-13. 1. Document Number: 88526. For technical questions within your region ...
1N5821 onsemi / Fairchild Schottky Diodes & Rectifiers Schottky Barrier datasheet, inventory, & pricing.
The Schottky Rectifier¿s state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ...
This series of 3 amp Schottky rectifiers in their axial-leaded “B” packaging offer flexible thruhole mounting. The 1N5822 and 1N6864 are military qualified ...
1N5821-TP Micro Commercial Co | Discrete Semiconductor Products
www.digikey.com › ... › Single Diodes
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1N5821-TP ; Series. - ; Package. Tape & Reel (TR). Cut Tape (CT) ; Product Status. Active ; Technology. Schottky ; Voltage - DC Reverse (Vr) (Max). 30 V.
For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. Datasheet button Datasheet.